BYT230PIV-1000 byt231piv-1000 october 1999 - ed: 3b fast recovery rectifier diodes ? dual high voltage rectifier devices are suited for free-wheeling function in converters and motor control circuits. packaged in isotop, they are intended for use in switch mode power supplies. description very low reverse recovery time very low switching losses low noise turn-off switching insulated package: isotop insulation voltage: 2500 v rms capacitance = 45 pf inductance < 5 nh features and benefits symbol parameter value unit v rrm repetitive peak reverse voltage 1000 v i frm repetitive peak forward current tp=5 m s f=1khz 700 a i f(rms) rms forward current 50 a i f(av) average forward current tc = 55 c d = 0.5 30 a i fsm surge non repetitive forward current tp = 10 ms sinusoidal 200 a t stg storage temperature range - 40 to + 150 c tj maximum operating junction temperature 150 c absolute ratings (limiting values, per diode) i f(av) 2 x 30 a v rrm 1000 v v f (max) 1.8 v trr (max) 80 ns main product characteristics isotop tm (plastic) k2 a2 a1 k1 byt231piv-1000 a2 k1 a1 k2 BYT230PIV-1000 tm: isotop is a registered trademark of stmicroelectronics. 1/5
symbol parameter test conditions min. typ. max. unit v f * forward voltage drop tj = 25 ci f = 30 a 1.9 v tj = 100 c 1.8 i r ** reverse leakage current tj = 25 cv r = v rrm 100 m a tj = 100 c 5ma pulse test : * tp = 380 m s, d < 2% ** tp = 5 ms, d < 2% static electrical characteristics (per diode) symbol parameter value unit r th(j-c) junction to case per diode total 1.5 0.8 c/w r th(c) coupling 0.1 when the diodes 1 and 2 are used simultaneously : d tj(diode 1) = p(diode) x r th(j-c) (per diode) + p(diode 2) x r th(c) thermal resistances to evaluate the conduction losses use the following equation: p = 1.47 x i f(av) + 0.010 i f 2 (rms) symbol test conditions min. typ. max. unit t rr tj = 25c i f = 1a v r = 30v di f /dt = - 15a/ m s 165 ns i f = 0.5a i r = 1a i rr = 0.25a 80 recovery characteristics (per diode) symbol parameter test conditions min. typ. max. unit t irm maximum reverse recovery time di f /dt = - 120 a/ m sv cc = 200 v i f = 30 a l p 0.05 m h tj = 100c (see fig. 11) 200 ns di f /dt = - 240 a/ m s 120 i rm maximum reverse recovery current di f /dt = - 120 a/ m s 19.5 a di f /dt = - 240 a/ m s 22 c = v rp v cc turn-off overvoltage coefficient tj = 100c v cc = 200v i f = i f(av) di f /dt = - 30a/ m s l p = 5 m h (see fig. 12) 4.5 / turn-off switching characteristics (per diode) BYT230PIV-1000 / byt231piv-1000 2/5
fig. 2: peak current versus form factor. fig. 3: non repetitive peak surge current versus overload duration. fig. 4: relative variation of thermal impedance junction to case versus pulse duration. 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 =0.05 =0.1 =0.2 =0.5 t =tp/t tp i f(av)(a) p f(av)(w) =1 fig. 1: low frequency power losses versus average current. fig. 6: recovery charge versus di f /dt. fig. 5: voltage drop versus forward current. BYT230PIV-1000 / byt231piv-1000 3/5
fig. 7: recovery time versus di f /dt. fig. 8: peak reverse current versus di f /dt. fig. 10: dynamic parameters versus junction temperature. fig. 9: peak forward voltage versus di f /dt. fig. 11: turn-off switching characteristics (without serie inductance). fig. 12: turn-off switching characteristics (with serie inductance). lc dut vcc if vf irm vcc tirm dif/dt lc dut vcc lp if vf vrp vcc dif/dt BYT230PIV-1000 / byt231piv-1000 4/5
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without expres s written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1999 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com ordering type marking package weight base qty delivery mode BYT230PIV-1000 BYT230PIV-1000 isotop 28 g. (without screws) 10 tube byt231piv-1000 byt231piv-1000 isotop 28 g. (without screws) 10 tube cooling method: by conduction (c) recommended torque value : 1.3 n.m (max 1.5 n.m) for the 6 x m4 screws. (2 x m4 screws recom- mended for mounting the package on the heatsink and the 4 screws given with the screw version).the screws supplied with the package are adapted for mounting on a board (or other types of terminals) with a thickness of 0.6 mm min and 2.2 mm max. epoxy meets ul94,v0 package mechanical data isotop ref. dimensions millimeters inches min. max. min. max. a 11.80 12.20 0.465 0.480 a1 8.90 9.10 0.350 0.358 b 7.8 8.20 0.307 0.323 c 0.75 0.85 0.030 0.033 c2 1.95 2.05 0.077 0.081 d 37.80 38.20 1.488 1.504 d1 31.50 31.70 1.240 1.248 e 25.15 25.50 0.990 1.004 e1 23.85 24.15 0.939 0.951 e2 24.80 typ. 0.976 typ. g 14.90 15.10 0.587 0.594 g1 12.60 12.80 0.496 0.504 g2 3.50 4.30 0.138 0.169 f 4.10 4.30 0.161 0.169 f1 4.60 5.00 0.181 0.197 p 4.00 4.30 0.157 0.69 p1 4.00 4.40 0.157 0.173 s 30.10 30.30 1.185 1.193 BYT230PIV-1000 / byt231piv-1000 5/5
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